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The single event upset characteristics of the 486-DX4 microprocessor

机译:486-DX4微处理器的单事件失败特性

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This paper describes the development of an experimental radiation testing environment to investigate the single event effect (SEE) susceptibility of the 486-DX4 microprocessor. The goal of this work was to experimentally characterize the single event effects of the 486-DX4 microprocessor using a cyclotron facility as the fault-injection source. Three different heavy ions were used to provide different linear energy transfer rates, and a total of six microprocessor parts were tested from two different commercial vendors. A consistent set of error modes were identified and the upset cross-sections were calculated. Results show a distinct difference in on-chip cache susceptibility, as well as a marked difference in vendor performance.
机译:本文介绍了实验辐射测试环境的开发,以研究486-DX4微处理器的单事件效应(SEE)敏感性。这项工作的目的是使用回旋加速器作为故障注入源,通过实验表征486-DX4微处理器的单事件效应。三种不同的重离子用于提供不同的线性能量传输速率,并且从两个不同的商业供应商处测试了总共六个微处理器部件。确定了一致的错误模式集,并计算了不正常的横截面。结果表明,片上高速缓存敏感性明显不同,供应商性能也明显不同。

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