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A synthesizable ram bist circuit for applying an O(n log/sub 2/ n) test that detects scrambled static pattern-sensitive faults

机译:一种可应用的O(n log / sub 2 / n)测试的可合成Rambist电路,用于检测加扰的静态模式敏感故障

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In this paper we describe improvements and extensions to the BIST RAM scheme described earlier by Cockburn and Sat. The first improvement is the use of maximum transition counters, instead of binary counters or linear feedback shift registers, to generate the addresses that are used in the self-test. This change increases the ability of the tests to detect delay faults in the peripheral circuitry. The second improvement is the extension of the original scheme to use a new O(n log/sub 2/ n) test for detecting scrambled static pattern sensitive faults. The O(n log/sub 2/ n) test is similar to a test described by Franklin and Saluja; however, the new test is approximately 20% shorter. In addition, the new test is transparent; that is, the contents of a fault-free memory are restored by the time the self-test has terminated. The RAM BIST circuit for the new scheme was specified and verified using VHSIC Hardware Description Language (VHDL). Instances of the BIST circuit can be synthesized automatically for any arbitrary RAM size using commercial logic synthesis tools. As with the scheme described by Cockburn and Sat, the hardware area overhead of the new scheme is below 1% for 4 Mb RAMs and this figure drops rapidly for larger RAM sizes.
机译:在本文中,我们描述了Cockburn和Sat先前描述的BIST RAM方案的改进和扩展。第一个改进是使用最大转换计数器而不是二进制计数器或线性反馈移位寄存器来生成用于自检的地址。这种变化增加了测试检测外围电路中的延迟故障的能力。第二个改进是扩展了原始方案,使其使用新的O(n log / sub 2 / n)测试来检测加扰的静态模式敏感故障。 O(n log / sub 2 / n)检验类似于Franklin和Saluja所描述的检验。但是,新测试要短20%。此外,新测试是透明的;也就是说,自检终止时,将恢复无故障存储器的内容。使用VHSIC硬件描述语言(VHDL)指定并验证了新方案的RAM BIST电路。使用商业逻辑综合工具,可以针对任意RAM大小自动综合BIST电路的实例。与Cockburn和Sat所描述的方案一样,对于4 Mb RAM,新方案的硬件区域开销在1%以下,而对于较大的RAM大小,该数字迅速下降。

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