This paper reports that cell reliability issues (e.g. V/sub T/ spread, program disturb, read disturb, subthreshold leakage current, and charge retention), read scheme, and cell structures are the factors for minimizing V/sub T/ spacing for multi-level storage in flash memory. A 2T cell structure is proposed for wider V/sub T/ window, high speed read, and smaller V/sub T/ spacing in order to store more V/sub T/ levels than 1T cell.
展开▼
机译：本文报告了细胞可靠性问题（例如，v / sub t / Spread，程序干扰，读取干扰，亚阈值泄漏电流和电荷保留），读取方案和单元结构是最小化多的V / sub t /间距的因素 - 在闪存中存储。提出了2T细胞结构，用于更宽的V / SUB T /窗口，高速读取和较小的V / SUB T /间隔，以便存储比1T单元更高的V / SUB T /级别。
展开▼
