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A diffusion limited mechanism to explain current pulse rate in a pre-breakdown current burst in silicone fluids

机译:一种扩散受限机制,用于解释硅油中的击穿前电流突发中的电流脉冲速率

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Measurements have been made of prebreakdown cavity growth and of the accompanying current pulse bursts in silicone fluids over a range of viscosities from 0.65 cSt to 1000 cSt. At high viscosities the average time between pulses (/spl delta/t) is proportional to fluid viscosity, but in the low viscosity limit the dependence is nearer to square root of viscosity. To explain this viscosity dependence we make use of the fact that a pulse cannot occur until charge from the previous pulse has been effectively removed. We consider two possible mechanisms of charge dissipation, namely (i) ion detrapping and drift in the applied field, and (ii) diffusion of an electronegative impurity species to the cavity interface, charge capture to create a mobile ion, and its subsequent drift in the field. For case (i) ion drift is the rate limiting process and this leads to /spl delta/t being proportional to viscosity. For case (ii), the diffusion limited case, /spl delta/t is proportional to the cube root of viscosity. This and other evidence inclines us to the diffusion limited model in the low viscosity limit.
机译:在0.65 cSt至1000 cSt的粘度范围内,已对硅流体中的击穿前腔增长以及随之产生的电流脉冲爆发进行了测量。在高粘度下,脉冲之间的平均时间(/ spl delta / t)与流体粘度成正比,但在低粘度极限下,依赖性更接近于粘度的平方根。为了解释这种粘度依赖性,我们利用了以下事实:只有有效地消除了前一个脉冲中的电荷,脉冲才发生。我们考虑了电荷耗散的两种可能机制,即(i)离子在电场中的俘获和漂移,以及(ii)负电性杂质扩散到空穴界面,捕获电荷以产生可移动离子,以及随后的漂移。场。对于情况(i),离子漂移是速率限制过程,这导致/ spl delta / t与粘度成比例。对于情况(ii),扩散受限情况/ spl delta / t与粘度的立方根成正比。该证据和其他证据使我们倾向于在低粘度极限下的扩散受限模型。

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