AlGaAs/InGaAs power P-HEMTs for high-efficiency, low-voltage portable applications

摘要

Power Pseudomorphic High Electron Mobility Transistors (P-HEMTs) with unprecedented efficiency are being produced for low-voltage portable wireless products. 12 mm devices operating at 3.5 V achieve more than 75% power added efficiency, 1.5 W output power, and 11.5 dB gain, simultaneously, at a frequency of 850 MHz.