Thermally stimulated currents and thermoluminescence in layer semiconductor InSe

摘要

The electron trapping centers of InSe crystals grown by the Bridgman method are investigated by using photoelectronic techniques, such as thermally stimulated currents (TSC) and thermoluminescence (TL). Several electron trapping centers, between 0.11 to 0.42 eV below the conduction band, with densities ranging from 10/sup 14/ to 10/sup 15/ cm/sup -3/ and capture cross-sections between 10/sup -17/ to 10/sup -20/ cm/sup 2/ are found.