Power measurements of adiabatic circuits by thermoelectric technique

摘要

We have developed a method to measure small values of power dissipation in VLSI chips by a thermal method using a Peltier cooler as a thermometer. The temperature rise of >10 /spl mu/K, corresponding to a power dissipation of >1 /spl mu/W, could easily be measured on a chip carrier, with measurement times of a few minutes. A power dissipation of >10 nW is measurable for long measurement times. The power of a simple adiabatic output buffer was measured using this method, and the dependence of power dissipation on the square of the load capacitance and frequency was verified.