An advanced 0.5 /spl mu/m CMOS/SOI technology for practical ultrahigh-speed and low-power circuits

摘要

Thin-film SOI MOSFETs offer high-speed and low-power characteristics due to reduced junction capacitance and reduced back-gate-bias effect. Therefore, thin SOI devices have been considered to be candidates for element transistor structures used in high-speed and low-power CMOS LSIs. In order to proceed to the stage of commercial application, it is necessary to demonstrate the effectiveness of SOI devices in various kinds of practical circuits. In this paper, we report an advanced 0.5 /spl mu/m CMOS/SOI technology and demonstrate ultrahigh-speed and low-power operation in two kinds of typical circuits: frequency divider and adder.