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Dynamic and Debye shielding and anti-shielding in magnetized, collisionless plasmas

机译:磁化无碰撞等离子体中的动态和德拜屏蔽和反屏蔽

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Summary form only given, as follows. Collisionless shielding in one dimensional (highly magnetized) plasmas is paradoxical. The insertion of a positive test charge into such a plasma locally accelerates the plasma electrons causing them to move faster in the vicinity of the test charge. Since flux conservation requires that faster moving electrons have lower density, the density of the negatively charged electrons will decrease around the test charge. The plasma anti-shields the test charge; instead of decreasing the net positive charge near the test particle, the plasma will increase the net charge. This phenomena has been sporadically recognized in the literature, but, to our knowledge, has never before been observed. While we observe anti-shielding in a pure electron plasma when we employ unusual initial conditions, more commonly we observe the converse-shielding. We show that this shielding results from the presence of electrons trapped in the potential well of the test charge. While several different mechanisms are observed to trap electrons, an ubiquitous, fast acting, transit-time mechanism always traps electrons when the test charge is introduced adiabatically. That one dimensional (1-d), collisionless shielding requires trapping does not appear to have been previously recognized and the explanation of shielding given in many textbooks and papers is incorrect or incomplete. Because the trapping results from dynamical processes, we call the resulting shielding "dynamic" shielding. Both the observed and calculated magnitude of dynamic shielding can be significantly smaller than Debye shielding; eventually collisions transform the dynamic shielding to Debye shielding.
机译:仅给出摘要表格,如下。一维(高度磁化)等离子体中的无碰撞屏蔽是自相矛盾的。将正测试电荷插入这样的等离子体中会局部加速等离子体电子,从而使它们在测试电荷附近更快地移动。由于通量守恒要求更快移动的电子具有较低的密度,因此带负电的电子的密度将在测试电荷附近降低。等离子体可屏蔽测试电荷;等离子体不会增加测试粒子附近的净正电荷,而是会增加净电荷。这种现象在文献中已经被零星地认可,但是据我们所知,从来没有被观察到过。当我们采用不寻常的初始条件时,我们会在纯电子等离子体中观察到反屏蔽,而更常见的是,我们会发现反屏蔽。我们表明,这种屏蔽是由于存在于测试电荷的势阱中的电子所致。尽管观察到了几种不同的捕获电子的机制,但是当绝热引入测试电荷时,普遍存在的,作用迅速的渡越时间机制总是捕获电子。一维(1-d)无碰撞屏蔽需要捕获,以前似乎尚未认识到,许多教科书和论文中对屏蔽的解释是不正确或不完整的。因为捕获是由动态过程导致的,所以我们将得到的屏蔽称为“动态”屏蔽。动态屏蔽的观测值和计算值都可以大大小于Debye屏蔽;最终,碰撞将动态屏蔽转换为Debye屏蔽。

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