Resonant interband and intraband tunneling in InAs/AlSb/GaSb double barrier diodes

摘要

We have realized a series InAs/AlSb/GaSb tunneling structures in which both interband and intraband tunneling occur, dependent on injection energy. The baseline structure consists of a single InAs well with GaSb barriers which serve as quantum wells for interband tunneling and barriers for intraband tunneling. At low biases, interband tunneling occurs through a coupled double well structure in the GaSb valence bands. At higher biases, intraband tunneling occurs through the InAs quantum well. The addition of a thin AlSb barrier at different points in the structure changes both the strength and number of peaks in the I-V/G-V characteristics.