Self-heating effects on SOI devices and implication to parameter extraction

摘要

In SOI devices heat dissipation is limited by a buried oxide layer. The consequence is the well known Self Heating (SH) phenomenon. We have analysed in depth the corresponding thermal effects on static and dynamic modes and the implications for the device operation. In this paper the original contributions are the following: decorrelation of temperature effects on the drain current via temperature dependence of mobility and impact ionization generation rate G/sub ii/. This results in a comprehensive explanation of the output conductance attenuation with increasing gate voltage (V/sub gs/). Analysis of displacement current effects, SH and impact ionization on transient device operation. Application to device modeling: proposal of a method for the parameters extraction that takes into account the nonlinear distortion of static output characteristics due to the SH phenomenon. The self-heating analysis, in this paper, is related to a 0.8 /spl mu/m technology on SIMOX substrate developed by LETI-CEA. The devices are enhancement mode n-channel MOSFETs.