Test structures and measurement techniques for the characterization of the dynamic behaviour of CMOS transistors on wafer in the GHz range

摘要

For high-precision modeling of dynamic transistor characteristics, the voltage dependence of the transistor capacitances has to be measured at different operating points and different frequencies. Test structures and measurement techniques are described which were used to determine the dynamic characteristics of CMOS transistors in the frequency range up to several gigahertz. By the application of a network analyzer, two measurement ports and multiple DC-biasing possibilities allow the determination of MOS transistor capacitances with all their voltage dependences. Layout and measurement results are presented.