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Epitaxial thin film growth and device development in monocrystalline alpha and beta silicon carbide

机译:单晶α和β碳化硅中的外延薄膜生长和器件开发

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摘要

Recent advances, especially in the areas of single-crystal boule and thin-film growth, device fabrication, and characterization, are reviewed. Bulk single crystals of 6H-SiC have been grown to 2.37-cm diameter using seeded sublimation. Monocrystalline thin films of high-purity beta -SiC have been grown directly on Si
机译:综述了最近的进展,特别是在单晶晶锭和薄膜生长,器件制造和表征方面。使用晶种升华法将6H-SiC块状单晶生长至直径2.37厘米。高纯度β-SiC单晶薄膜已直接在Si上生长

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