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Improved step coverage of silane-based PECVD nitride and oxynitride passivation films

机译：改善了基于硅烷的PECVD氮化物和氮氧化物钝化膜的台阶覆盖率

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The effects of gas flow and electrode spacing on the step coverage of silane-based nitride and oxynitride films formed by plasma-enhanced chemical-vapor deposition have been studied. It was found that the sidewall step coverage and sidewall film wet etch rate can be improved by varying these process parameters.

机译：研究了气体流量和电极间距对通过等离子体增强化学气相沉积形成的硅烷基氮化物和氮氧化物薄膜台阶覆盖率的影响。已经发现，通过改变这些工艺参数可以提高侧壁台阶覆盖率和侧壁膜湿蚀刻速率。

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《》|1991年|P.423-425|共3页
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Pang; B.; Cheung; D.;
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中图分类无线电电子学、电信技术;
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1. Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers [J] . Hallam B., Tjahjono B., Wenham S. Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2012,第1期

机译：PECVD氮氧化硅薄膜成分对硅片表面钝化的影响
2. Properties and characterization of low-temperature amorphous PECVD silicon nitride films for solar cell passivation [J] . Ali S, Gharghi M, Sivoththaman S, Journal of Materials Science . 2005,第6期

机译：用于太阳能电池钝化的低温非晶PECVD氮化硅膜的性质和表征
3. Properties and characterization of low-temperature amorphous PECVD silicon nitride films for solar cell passivation [J] . S. Ali, M. Gharghi, S. Sivoththaman, Journal of Materials Science . 2005,第6期

机译：用于太阳能电池钝化的低温非晶PECVD氮化硅膜的性质和表征
4. Improved step coverage of silane-based PECVD nitride and oxynitride passivation films [C] . Pang B., Cheung D., Institute of Electric and Electronic Engineer International IEEE VLSI Multilevel Interconnection Conference . 1991

机译：改进的基于硅烷的PECVD氮化物和氮氧化物钝化膜的步进覆盖
5. Hydrogen determination in pulsed PECVD silicon nitride thin films by RBS, ERDA, and CARS. [D] . Phillips, BarJean. 2006

机译：用RBS，ERDA和CARS测定脉冲PECVD氮化硅薄膜中的氢。
6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

机译：射频等离子体增强化学气相沉积（RF PECVD）反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
7. Refractive index of PECVD-SiNy rear passivation films and its effect on assisted passivation of PERCs [O] . Supawan Joonwichien, Yasuhiro Kida, Masaaki Moriya, 2018

机译：PECVD-yiny后钝化膜的折射率及其对PERCS辅助钝化的影响
8. Process Parameter-Growth Environment-Film Property Relationships for ReactiveSputter Deposited Metal (V, Nb, Zr, Y, Au) Oxide, Nitride, and Oxynitride Films [R] . Aita, C. R. 1993

机译：工艺参数 - 生长环境 - 反应溅射沉积金属（V，Nb，Zr，Y，au）氧化物，氮化物和氮氧化物薄膜的薄膜性质关系

Improved step coverage of silane-based PECVD nitride and oxynitride passivation films

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