Effect of PECVD silicon oxynitride film composition on the surface passivation of silicon wafers

摘要

This work presents a quantitative analysis on the relationship between the composition of PECVD silicon oxynitride and surface passivation on float zone silicon wafers with planar non-diffused surfaces using FTIR spectroscopy. Implied open circuit voltages of approximately 740 mV are demonstrated on both n-type and p-type substrates, with associated 1-sun effective minority carrier lifetimes of 1.8 ms and 1.1 ms respectively. Improvements in the implied open circuit voltage of up to 80 mV upon thermal annealing are presented for films with SiH peak wavenumbers >2200cm-~1 and are attributed to increasing oxygen incorporation.