High-efficiency GaAs and AlGaAs solar cells grown by molecular beam epitaxy

摘要

One-sun AM 1.5 efficiencies of 23.8% for 0.25 cm/sup 2/ area GaAs solar cells fabricated from molecular beam epitaxy (MBE) material were obtained. The performance is comparable to that obtained with metalorganic chemical vapor deposited (MOCVD) material. One-sun AM 1.5 efficiencies of 16.1% for 0.25 cm/sup 2/ area Al/sub 0.22/Ga/sub 0.78/As solar cells fabricated from MBE material were also obtained. This efficiency is 3.2% higher than the previously best reported efficiency of 12.9% for an Al/sub 0.2/Ga/sub 0.8/As solar cell fabricated from MBE material.