Unified generation model with donor and acceptor-type trap states for heavily doped silicon

摘要

A quasi-classical generation formulation is analytically developed for heavily doped silicon where electric field phenomena are important. This quasi-classical formalism is suitable for modeling thermal and electric field-dependent leakage mechanisms in semiconductor structures with multiple trap state types and populations. The formalism is valuable in the explanation of the heavily-doped gate-diode leakage characteristic in 4- to 64-Mb p/sup +/ substrate-plate-trench DRAM cells and p-channel MOSFETs. The development is implemented into a three-dimensional (3-D) finite-element device simulator (FIELDAY II), advancing VLSI device modeling.