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Design and analysis of an optical-powered on-chip power supply

机译:光供电片上电源的设计与分析

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The design of an optical-powered on-chip power supply is described. This power supply is intended for use with microchips. An NMOS voltage doubler, a CMOS voltage doubler, a CMOS voltage tripler, and a CMOS oscillator have been designed. The design of an n-stage voltage multiplier is proposed and simulated. The optical powered on-chip power supply consists of a CMOS voltage tripler and a CMOS oscillator used as a clock. Simplicity has been emphasized in the design. The static power dissipation for an NMOS transistor design is much more than that of a CMOS transistor design. The NMOS design performance deteriorates under load conditions. The CMOS design has very minimal static power consumption. Because of this, the CMOS design is superior to the NMOS design. This power supply can deliver power of about 25 mu W with a regulation of about 10% using on-chip capacitors. Higher power operation is obtained using external capacitors. Standard 3-micron CMOS MOSIS (MOS Implementation Service) design rules have been used for the design and simulation of the circuit. The representative chip area allocated to a 25 mu W source is 0.25 mm/sup 2/. The whole circuit is simulated by using UC Berkeley SPICE2G.5/6.
机译:描述了光供电的片上电源的设计。该电源旨在与微芯片一起使用。已经设计了NMOS倍压器,CMOS倍压器,CMOS倍压器和CMOS振荡器。提出并仿真了n级电压倍增器的设计。由光供电的片上电源包括一个CMOS电压三倍器和一个用作时钟的CMOS振荡器。设计中强调了简洁性。 NMOS晶体管设计的静态功耗远远大于CMOS晶体管设计的静态功耗。在负载条件下,NMOS设计性能会下降。 CMOS设计的静态功耗非常小。因此,CMOS设计优于NMOS设计。使用片上电容器,该电源可以提供约25μW的功率,并具有约10%的调节率。使用外部电容器可获得更高的功率运行。标准的3微米CMOS MOSIS(MOS实施服务)设计规则已用于电路的设计和仿真。分配给25μW光源的典型芯片面积为0.25 mm / sup 2 /。整个电路是使用UC Berkeley SPICE2G.5 / 6进行仿真的。

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