A 150 K gate 250 ps BiCMOS SOG with an emitter-follower CMOS (ECMOS) cell

摘要

A 150 K-gate 250-ps delay time BiCMOS SOG (sea-of-gates) has been developed by applying a novel emitter-follower CMOS (ECMOS) basic cell and by using a 0.8- mu m BiCMOS process with triple-level metallization. The SOG features (i) flexibility for accommodating 4-ns access-time SRAM of up to 16 kb, (ii) less than 0.5-ns clock skew in the chip, and (iii) up to 80% gate utilization.