New nano-porous composit films of silsesquioxane polymer and silicalite-1 for low dielectric applications

摘要

Low - κ interlayer dielectric materials have been identified by the microelectronics industry as one of the critical factors in the development of submicron technology for integrated circuits. Present standard in low κ materials have dielectric constants κ in the range of 2.9 - 3.3. In order to reduce the κ value it is necessary either to incorporate atoms and chemical bonds that have a lower polarizability, or else to lower the atom density in the material, or both. In this paper, we report on a series of new porous materials based on organic/inorganic hybrid silsesquioxane polymers (R_8Si_8O_(12))_n and nano-crystalline particle of silicalite-1 with κ in the range of 1.7-2.1.