Characteristics of surface-emitting cold cathode based on porous polysilicon

摘要

It is demonstrated that porous polysilicon (PPS) diode fabricated on the silicon substrate operates as efficient and stable surface-emitting cold cathode. A 1.5 #mu#m of non-doped polysilicon layer is formed on n-type (100) silicon wafer and anodised ina solution of HF(50