Effect of substrate surface roughness and film thickness on the properties of teflon amorphous fluoropolymer thin films for silicon integrated circuits

摘要

At present, the semiconductor industry is working towards integrating copper (Cu) with a low-k material to achieve significant reductions in both resistance (R) and capacitance (C). Of the several challenges associated with the switch from Aluminum (Al) / SiO_2 to Cu / low-k, interface roughness is a critical aspect of Cu / low-k interconnect systems. In this paper we report, the effect of surface roughness of chemicalmechanical polished copper pallets on the electrical, mechanical and structural properties of Cu-Teflon AF-Cu metal-insulator-metal (MIM) structures. We also report the effect of film thickness on the growth morphology and electrical properties of Teflon films. The Teflon AF 1600 (kapprox1.93) thin films were deposited using a low temperature direct liquid injection (DLI) and rapid photothermal processing (RPP) assisted chemical vapor deposition (CVD) technique.