InGaN/GaN Dot-in Nanowire Monolithic LEDs and Lasers on (001) Silicon

摘要

GaN-based nanowire arrays have been grown on (001)Si substrate by plasma-assisted molecular beam epitaxy and their structural and optical properties have been determined. In_xGai_(1-x)N disks inserted in the nanowires behave as quantum dots with emission ranging from visible to near-infrared. We have exploited these nanowire heterostructure arrays to realize light-emitting diodes and diode lasers in which the quantum dots form the active light emitting media. The fabrication and characteristics of 630nm light-emitting diodes and 1.3μm edge-emitting diode lasers are described.