Dept. of Materials Science Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.;
rnDept. of Materials Science Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.;
rnDept. of Materials Science Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.;
rnDept. of Materials Science Engineering, National Chung Hsing University, Taichung 402, Taiwan, R.O.C.;
rnDept. of Electro-Optical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.;
rnDept. of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.;
light-emitting diode (LED); near ultraviolet (UV); InGaN; insertion structure; distributed SiO_2 mask; heavily Mg-doped GaN insertion layer;
机译:具有图案分布布拉格反射器的近紫外InGaN / AlGaN LED的增强输出功率
机译:具有GaN / InGaN超晶格结构的AlGaN / InGaN MQW LED的性能增强
机译:在MQW有源层和n-GaN覆盖层之间具有InGaN插入层的,基于GaN的蓝色LED的改进性能
机译:具有各种插入结构的近紫外线/ AlGaN LED的性能提高
机译:高性能紫外线光电探测器和LED和光电探测器的单片集成在SI上生长的P-GAN / AlGaN / GaN异质结构上的LED和PhotoTopetector
机译:使用多层堆叠的AlGaN / GaN结构改善紫外发光二极管的电流扩展性能
机译:掺杂浓度对单QW双异质结构Ingan / AlGaN发光二极管性能的影响