Transient photoconductivity in InGaN/GaN multiple quantum wells, measured by time-resolved terahertz spectroscopy

机译：通过时间分辨太赫兹光谱法测量的InGaN / GaN多量子阱中的瞬态光电导

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Terahertz conductivity of InGaN/GaN MQWs was studied by time-resolved terahertz spectroscopy. Restoration of the built-in piezoelectric field leads to a nonexponential carrier density decay. Terahertz conductivity spectrum is described by the Drude-Smith model.

机译：通过时间分辨太赫兹光谱研究了InGaN / GaN MQW的太赫兹电导率。内置压电场的恢复会导致非指数载流子密度衰减。太赫兹电导率谱由Drude-Smith模型描述。

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《LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09》|2009年|628-629|共2页
会议地点 Belek-Antalya(TR);Belek-Antalya(TR)
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Porte H. P.; Turchinovich D.; Cooke D. G.; Jepsen P. Uhd;
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DTU Fotonik - Department of Photonics Engineering, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark;

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3. Transient photoconductivity in GaAs as measured by time-resolved terahertz spectroscopy [J] . Beard MC., Schmuttenmaer CA., Turner GM. Physical Review, B. Condensed Matter . 2000,第23期

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4. Transient Photoconductivity in InGaN/GaN Multiple Quantum Wells, Measured by Time-resolved Terahertz Spectroscopy [C] . H. P. Porte, D. Turchinovich, D. G. Cooke, LEOS Annual Meeting . 2009

机译：InGaN / GaN多量子阱中的瞬态光电导性通过时间分辨的太赫兹光谱测量
5. Photoconductivity in bulk and nanocrystalline semiconductors measured with time-resolved terahertz spectroscopy. [D] . Turner, Gordon Meredith. 2003

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6. A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures [O] . Yuchen Xing, Lai Wang, Di Yang, -1

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7. Transient photoconductivity in InGaN/GaN multiple quantum wells, measured by time-resolved terahertz spectroscopy [O] . Porte Henrik, Turchinovich Dmitry, Cooke David, 2009

机译：通过时间分辨太赫兹光谱测量的InGaN / GaN多量子阱中的瞬态光电导率

Transient photoconductivity in InGaN/GaN multiple quantum wells, measured by time-resolved terahertz spectroscopy

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