Nanosecond laser annealing to decrease the damage of picosecond laser ablation of anti-reflection layers on textured silicon surfaces

摘要

This work discusses the impact of laser annealing on a picosecond laser ablation process of anti-reflection layers on damage etched and random pyramid textured silicon wafers. The laser ablation is realized using picosecond pulsed laser radiation which facilitates a continuously ablated passivation layer but induces a significant reduction in charge carrier lifetime. It is demonstrated that the application of a nanosecond pulsed laser annealing step can improve the electrical properties of the picosecond laser treated area.