Long-wavelength lasers and detectors fabricated on InP/GaAs superheteroepitaxial wafer

摘要

Abstract: InGaAsP laser diodes and InGaAs photodiodes grown on GaAs substrates have been reviewed. The laser diodes exhibit low threshold current of 31 mA and high slope efficiency of 0.2 W/A which are comparable with the diodes grown on InP substrates. The InGaAs photodiodes also show the comparable characteristics with the photodiodes grown on InP substrates. A GaAs MESFET and an InGaAs photodiode have been monolithically integrated. This receiver OEIC has sensitivity of $MIN@28.1 dBm at transmission rate of 622 Mb/s with a bit error rate of 10$+$MIN@9$/.!