Sub-30-nm PMOSFET using Gas Cluster Ion Beam Boron Doping for 45-nm node CMOS and beyond

机译：使用气体团簇离子束硼掺杂的低于30nm的PMOSFET，适用于45nm以上的节点CMOS

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Formation of ultra shallow junctions (USJ) with sufficiently low resistance in the source/drain extension (SDE) region is necessary for MOSFETs at the 45-nm node and beyond. Several doping technologies, such as plamsa doping, cluster ion implantation and

机译：对于45 nm节点及以后的MOSFET，必须在源极/漏极扩展（SDE）区中形成具有足够低电阻的超浅结（USJ）。几种掺杂技术，例如Plamsa掺杂，簇离子注入和

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《Junction Technology, 2007 International Workshop on》|2007年|P.61-62|共2页
会议地点 KyotoJapan
作者
Kitazawa; M.; Togawa; M.; Rosser; D.; Yamashita; T.; Oda; H.; Inoue; Y.; Kawasaki; Y.; Iwamatsu; T.;
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CMOS integrated circuits; MOSFET; boron; ion implantation; nanoelectronics; photoresists; semiconductor doping; silicon; CMOS; PMOSFET; Si:B; gas cluster ion beam boron doping; low energy ion implantation; photoresist; size 45 nm; source/drain extension; ultra shallow j;

机译：CMOS集成电路； MOSFET;硼;离子注入纳米电子学光刻胶半导体掺杂硅; CMOS; PMOSFET;硅：硼;气体团簇离子束硼掺杂；低能离子注入；光刻胶尺寸45 nm;源极/漏极扩展；超浅j;

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专利

1. Investigation and Localization of the SiGe Source/Drain (S/D) Strain-Induced Defects in PMOSFET With 45-nm CMOS Technology [J] . C. Y. Cheng, Y. K. Fang, J. C. Hsieh, IEEE Electron Device Letters . 2007,第期

机译：使用45 nm CMOS技术的PMOSFET中SiGe源/漏（S / D）应变引起的缺陷的调查和定位
2. Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond [J] . Takashi HAYASHI, Tomohiro YAMASHITA, Katsuya SHIGA, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第4B期

机译：抑制硼从源极/漏极延伸区的渗透，以改善65nm节点CMOS及以上晶体管的栅极泄漏特性和栅极氧化物可靠性
3. Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped Channel [J] . Chen C.-W., Chung C.-T., Tzeng J.-Y., IEEE Electron Device Letters . 2014,第1期

机译：具有原位硼掺杂沟道的体贴锗三栅极无结PMOSFET
4. Sub-30-nm PMOSFET using Gas Cluster Ion Beam Boron Doping for 45-nm node CMOS and beyond [C] . M. Kitazawa, Y. Kawasaki, M. Togawa, International Workshop on Junction Technology . 2007

机译：使用气体聚类离子束硼掺杂45-nm节点CMOS及更远的子30-NM PMOSFET
5. A deep-submicron single gate CMOS technology using in-situ boron-doped polycrystalline silicon-germanium gates formed by rapid thermal chemical vapor deposition [D] . Li, Vivian Zhi-Qi 1997

机译：一种深亚微米单栅极CMOS技术，使用通过快速热化学气相沉积形成的原位掺杂硼的多晶硅锗锗栅极
6. pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology [O] . Guilei Wang, Jun Luo, Jinbiao Liu, 2017

机译：采用22 nm节点CMOS技术的SiH4和B2H6前体的ALD W填充金属功能的pMOSFET
7. Correction: Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering [O] . Dong-Jin Yun, Seyun Kim, Changhoon Jung, 2018

机译：校正：用AR气体聚束离子束溅射原位光扫描光谱直接表征石墨烯掺杂状态

Sub-30-nm PMOSFET using Gas Cluster Ion Beam Boron Doping for 45-nm node CMOS and beyond

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