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Impurity Effects on Pore Formation at AI_2O_3/Alloy Interfaces

机译:杂质对AI_2O_3 / Alloy界面上孔形成的影响

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摘要

The adhesion of Al_2O_3 scales on commercial grade alloys that do not contain a reactive element is usually poor due to the presence of 10-50 wppm of sulfur impurity, and/or of pores that formed at the scale/alloy interface. Sulfur is usually believed to segregate to the interface to weaken the interfacial bonding and to stabilize interfacial pores. By using field emission scanning Auger microscopy, the distribution of sulfur on pores and on oxide imprinted areas at Al_2O_3/FeAl interfaces was precisely determined. Interfacial pore growth as a function of oxidation time was obtained from scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses. The effects of sulfur segregation, surface impurity and reactive elements on pore nucleation and growth are discussed.
机译:由于存在10-50 wppm的硫杂质和/或在氧化皮/合金界面处形成的孔,Al_2O_3氧化皮在不含反应性元素的商业级合金上的附着力通常较差。通常认为硫会偏析到界面上,从而削弱界面键合并稳定界面孔隙。通过使用场发射扫描俄歇显微镜,可以精确地确定硫在Al_2O_3 / FeAl界面上的孔和氧化物压印区域的分布。从扫描电子显微镜(SEM)和原子力显微镜(AFM)分析获得了界面孔的生长与氧化时间的关系。讨论了硫的偏析,表面杂质和反应性元素对孔形核和生长的影响。

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