Pure-silica zeolite low-k dielectric thin films by spin-on process

摘要

Spin-on silicalite thin films were prepared from silicalite nanocrystals. Spin-on silicalitefilms with high porosity have a dielectric constant (k) of 1.8-2.2. A secondary growth ofnanocrystals was carried out on spin-on films under microwave treatment. It was found that asecondary growth of nanocrystals by microwave treatment could increase the mechanicalstrength and control the inter-particle pore size and porosity of spin-on silicalite films.Microwave-treated spin-on films have a k value of 2.2-2.4. The effect of moisture on k valuewas also studied. The silylation of silicalite films with chlorotrimethylsilane was conductedto eliminate the effect of moisture on the dielectric constant. It was revealed that stable kvalues were obtained after silylation.