首页> 外文会议>IUMRS International Conference in Asia;IUMRS-ICA; 20060910-14;20060910-14; Jeju(KR);Jeju(KR) >Electronic Structure and Defect States of Transition Metal Doped Rutile TiO_2
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Electronic Structure and Defect States of Transition Metal Doped Rutile TiO_2

机译:过渡金属掺杂金红石型TiO_2的电子结构和缺陷态

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The electronic structure and defect states of 6.25% transition metal (TM = Fe and Co) doped rutile titanium dioxide were investigated by ab initio ultrasoft pseudopotential plane wave method based on density functional theory. When a Fe or Co atom was substituted for a Ti site of TiO_2 lattice, additional unoccupied 3d-states of TM appeared as defect states in band-gap and occupied 3d-states represented metallic behavior (half-filled states).It was found that two occupied defect states and one half-filled defect state were the 3d-states of TM from the calculation of band decomposed charge density. The higher unoccupied states were hybridized with unoccupied oxygen 2pstates and located at the middle of band-gap.
机译:采用基于密度泛函理论的从头算超软pseudo势平面波方法研究了掺杂6.25%过渡金属(TM = Fe和Co)的金红石型二氧化钛的电子结构和缺陷态。当用Fe或Co原子代替TiO_2晶格的Ti位点时,TM的其他未占据3d状态以带隙中的缺陷状态出现,占据3d状态代表金属行为(半填充状态)。根据带分解电荷密度的计算,TM的3d状态为2个缺陷缺陷状态和1个半填充缺陷状态。较高的未占据状态与未占据的氧2p状态杂交,并位于带隙的中间。

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