Electronic stopping power for Monte Carlo simultion of ion implantation into SiC

摘要

A new electronic stooping power model for Monte Carlo simulation of ion implantation into 6H-SiC is presented. This model is based on the nonlinear density functional approach of Echenique et al. for the energy loss of slow ions miving through an electron gas and the ab initio pseudopotential calculations of Park et al. for the map of valence electrons of 6H-SiC crystal. A modified linear response theory has been used to treat the core electrons stopping. This model does not need fitting parameters and allows to fit the experimental distributions of implanted dopants in SiC both the peak region and the channeling tail of the SIMS profiles. direct c 1999 Elsevier Science B.V. All rights reserved.