首页> 外文会议>International VLSI Multilevel Interconnection Conference(VMIC); 20040930-1002; Waikoloa Beach,HI(US) >Recent Advances in the Development of Ceria-Based Slurries for Inner Layer Dielectric CMP
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Recent Advances in the Development of Ceria-Based Slurries for Inner Layer Dielectric CMP

机译:内层介电CMP的二氧化铈基浆料开发的最新进展

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New ceria-based slurries for ILD CMP have been developed that meet the extremely rigorous objectives necessary for the production of sub-90nm devices. The slurries are single component products with long shelf- and pot-lives. Control of both the ceria particle manufacture (solid state or solution grown) and the slurry formulation in-house is critical for the production of consistent product, to minimize lot-to-lot variability. Slurries with self-stopping behavior and high SHRR have been described in this paper. Recent work has led to slurries with both high SHRR and self-stopping capability and this will be reported in the near future.
机译:已经开发出用于ILD CMP的新的基于二氧化铈的浆料,这些浆料满足生产90nm以下器件所需的极其严格的目标。浆料是具有较长保质期和适用期的单组分产品。内部控制二氧化铈颗粒的生产(固态或溶液生长)和内部浆料配方对于生产一致的产品至关重要,以最大程度地减少批次之间的差异。本文已经描述了具有自停止行为和高SHRR的浆料。最近的工作已导致具有高SHRR和自停能力的浆料,并将在不久的将来进行报道。

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