Effective Rinse Aiming at Water-Mark-free Drying For Single-spin Wet Cleaning Process

摘要

We investigated the effect of the various solutions for rinse in terms of the dissolved silicon from wafer and the water mark. As a result, dissolved nitrogen water and lower pH solution could prevent generating dissolved silicon. And we demonstrated that both dissolved nitrogen water and lower pH solution are very effective to suppress water marks. In particular, in the condition that the rinse and dry steps after HF process were performed under lower oxygen concentration, the water marks were suppressed completely by using the low pH water solution with nitrogen dissolving as rinse water.