Single Wafer Hydrophobic Surface Preparation on 300mm by HF vapor

摘要

The use of HF in vapour phase allows to avoid usual particle defectivity commonly observed on phobic surface using aqueous phase with spin on process. In the same time, we achieved a stable, repeatable, uniform and fast HF last surface preparation on 300mm wafers. Compared to conventional 200mm liquid process, HF vapour process provides similar surface passivation without any C contamination. Finally, HF_g process preceded by an adapted cleaning sequence provides a convenient surface preparation addressing particle and metallic contamination and final silicon surface passivation for advanced technology node requirements.