This paper is intended for persons in the technical fields of thin-film applications, manufacturing of sputtering targets and the manufacturing of refractory metals. The use of tantalum as sputtered films is increasing, particularly as a barrier layer before copper metallization of integrated circuits. Properties of sputtering targets may affect the sputtering process as well as the properties of the film. This paper discusses recent advancements in the processing of tantalum metal and their impact on chemical composition, microstructure, and crystallographic texture of targets. Results of on-going research to understand the interactions between target properties, the sputtering process and the properties of the sputtered films are also reviewed.
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