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Wheatstone Bridge Magnetic Sensor Based on LocalManipulation of Exchange Bias System by Current Heating in MgO Magnetic Tunnel Junctions

机译:MgO磁性隧道结电流局部操纵交换偏置系统的惠斯通电桥磁传感器。

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@@ MgO based magnetic tunnel junction (MTJs) is one of promising candidates for magnetic sensor due to its intrinsic advantages over GMR, AMR and Hall sensors, like high signal level, small size, low cost, and low power consumption. In the industrial applications, in order to compensate for temperature drifts in different environment, which give rise to a change in resistance, balanced bridge circuits are required to remove the DC offset. However, the incorporation of MgO based magnetic tunnel junctions (MTJ) in a full Wheatstone bridge configuration raises a number of problems due to the simultaneous requirement of high annealing temperature to crystallize the CoFeB (Ta>300°C), and the setting of the two different and symmetric orientations. Early GMR devices used a
机译:基于MgO的磁性隧道结(MTJ)是磁性传感器的有希望的候选者之一,因为它比GMR,AMR和Hall传感器具有内在的优势,例如信号电平高,尺寸小,成本低和功耗低。在工业应用中,为了补偿不同环境中的温度漂移(会引起电阻变化),需要平衡电桥电路来消除直流偏移。然而,由于同时需要高退火温度以结晶CoFeB(Ta> 300°C),并且凝固温度的设定,在完整的惠斯通电桥结构中掺入基于MgO的磁性隧道结(MTJ)带来了许多问题。两种不同且对称的方向。早期的GMR设备使用了

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