Magnetic Materials Center, National Institute for Materials Science, Tsukuba 305-0047,Japan;
Research Institute of Magnetic Materials, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, China;
INESC Microsistemas e Nanotecnologias (INESC MN) and IN-Institute of Nanoscience and Nanotechnology,1000-029 Lisbon, Portugal;
机译:由线性MgO磁性隧道结组成的惠斯通电桥传感器
机译:退火对具有FeMn交换偏置层的MgO基磁性隧道结中隧穿磁阻的影响
机译:用于微微特斯拉磁场检测的MgO势垒磁性隧道结偏置电流的调谐
机译:基于MgO磁隧道交叉路口电流加热的惠斯通桥磁传感器基于交换偏置系统的局域长
机译:具有MgO隧道势垒的垂直磁性隧道结
机译:自旋隧穿电流驱动CoFeB / MgO / CoFeB磁性隧穿结的超快退磁增强
机译:用富普尔互换偏置层对MgO的磁隧道结隧道磁阻的退火效应