Morphology dependence of surface smoothing of Ar gas cluster ion beams

摘要

Gas cluster ion beam (GCIB) have been used to realize atomic scale surface smoothing and high sputtering yields. Micro pattern were irradiated with Ar cluster ion beam at the energy of 20 keV and irradiation ion dose from 1x10~(17) to 4x10~(17) ions/cm~2. After irradiation, the pattern depth of the substrate was measured with AFM. The depth of line pattern decreased with increased irradiation ion doses, the depth of the 0.1 μm line pattern decreased from 16.8 nm to 5 nm. The short spatial wavelength was removed with GCIB. From this result, cluster ion beams are more effective for short spatial wavelength less than 1μm.