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Magnetoresistance in YBCO/LSMO bilayers

机译:YBCO / LSMO双层中的磁阻

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摘要

The magnetoresistance (MR) behavior in YBa_2Cu_3O_7/La_(0.7)Sr_(0.3)MnO_3 (YBCO/LSMO) bilayers grown on (100) LaAlO_3 substrate ate investigated. It is found that by increasing the thickness of YBCO (t) from zero to 200 nm, the MR ratio at 300K is suppressed from -15% to near zero. On the other hand, the MR ratio at 77 K increases from -5 % to -20 % as t increases to 50 nm, which is attributed to the spin accumulation at the interface between YBCO and LSMO layers.
机译:研究了在(100)LaAlO_3衬底上生长的YBa_2Cu_3O_7 / La_(0.7)Sr_(0.3)MnO_3(YBCO / LSMO)双层中的磁阻(MR)行为。发现通过将YBCO(t)的厚度从零增加到200nm,将300K下的MR比从-15%抑制到接近零。另一方面,随着t增加到50nm,在77K的MR比从-5%增加到-20%,这归因于在YBCO和LSMO层之间的界面处的自旋累积。

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