DEPOSITION OF COPPER MOCVD USING HEXAFLUOROACETYLACETONATE COPPER 1,5-DIMETHLYCYCLOOCTADIENE AS A PRECURSOR

摘要

The deposition characteristics of copper by metal organic chemical vapor deposition (MOCVD) using (hfac)Cu(l,5-DMCOD) (1,1,1,5,5,5-hexafluoro-2,4-pentanedionato dimethyl-l,5-cyclooctadiene) as a precursor have been investigated in terms of adding H_2, H(hfac), or C_2H_5I to the He carrier gas stream. The Cu films deposited using different carrier gases revealed slightly different characteristics, such as film resistivity, surface roughness and reflectance, impurity content, and microstructure. The He carrier gas system with H_2 or H(hfac) led to a higher deposition rate in the surface reaction limited region and enhanced the two dimensional lateral growth mode. MOCVD Cu films in the 500 to 700 A thickness range with low resistivity, high reflectance, and good adhesion to TiN were obtained. An electroplating Cu seed layer, which has a film quality quite similar to that of annealed, sputtered Cu, can thus be deposited by MOCVD using (hfac)Cu(l,5-DMCOD) as a precursor, by manipulating the carrier gas system.