首页> 外文会议>International Symposium on Cluster and Nanostructure Interfaces, Oct 25-28, 1999, Richmond, Virginia, USA >THEORETICAL STUDY ON THE MODIFICATION OF ACTIVE SITES IN GOLD SURFACES MODELED AS FINITE CLUSTERS. INFLUENCE OF STRUCTURAL DEFECTS AND THE APPLIED OVERPOTENTIAL
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THEORETICAL STUDY ON THE MODIFICATION OF ACTIVE SITES IN GOLD SURFACES MODELED AS FINITE CLUSTERS. INFLUENCE OF STRUCTURAL DEFECTS AND THE APPLIED OVERPOTENTIAL

机译:有限簇模型化的金表面活性位点修饰的理论研究。结构缺陷的影响和应用的过势性

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We report a description of the reactivity of a gold surface from theoretical calculations. This surface has been modeled with finite clusters, keeping the fcc crystal structure. The clusters are built with one, two or four unit cells. The influence exerted by structural defects and excess charge (to model an applied overpotential), on the density distribution in the surface, is analyzed. To describe the surface reactivity we employ reactivity indices from Density Functional Theory such as the Fukui functions and the condensed local softnesses. These were computed at an abinitio Hartree-Fock level, using the pseudopotentials of Hay and Wadt. From our numerical results we can conclude that the active sites may be clearly defined and pin-pointed. The cluster charge substantially modifies the distribution and position of the active sites, leading to changes in the active sites distribution from on top to on hollow or on bridge positions, depending on the cluster charge. Furthermore, it is observed that the presence of structural defects greatly modify the HOMO density close to the defect and this can be used to explain to some extent the superficial diffusion phenomenon experimentally observed, as well as the adsorption of ions in some specific surface sites.
机译:我们从理论计算报告了金表面反应性的描述。该表面已使用有限簇建模,保持了fcc晶体结构。群集由一个,两个或四个单位单元构建。分析了结构缺陷和过量电荷(用于模拟施加的超电势)对表面密度分布的影响。为了描述表面反应性,我们使用了密度泛函理论的反应指数,例如Fukui函数和凝聚的局部柔软度。这些是使用Hay和Wadt的伪势从头算到Hartree-Fock一级计算的。从我们的数值结果,我们可以得出结论,可以明确定义和指出活动位置。簇电荷基本上改变了活性位点的分布和位置,导致活性位点分布从顶部到中空或在桥的位置上变化,这取决于簇电荷。此外,观察到结构缺陷的存在极大地改变了靠近缺陷的HOMO密度,这可以在一定程度上解释实验观察到的表面扩散现象,以及某些特定表面部位离子的吸附。

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