DEPOSITION OF HYDROGENATED Si CLUSTERS ON Si SURFACES

摘要

We study deposition of the Si_6H_(13)~+ and Si_8H_(19)~+ cluster ions, in which atoms are forming the sp~3 bonding network, on Si surfaces using an ultra-high vacuum (UHV) system developed for structure-controlled cluster deposition on solid surfaces. The system allowed us to control kinetic energy of the clusters during the deposition E_d down to 2 eV. The Si(111)-(7x7) surfaces deposited with Si_6H_(13)~+ of 2-36 eV and Si_8H_(19)~+ of 6 and 12 eV were observed by Scanning Tunneling Microscopy (STM). Observed structures of deposited clusters and cluster ordering on the surfaces were dependent on E_d, indicating that E_d plays a key role in structure formation by cluster deposition.