首页> 外文会议>International Symposium on Advanced Luminescent Materials and Quantum Confinement, Oct 18-20, Honolulu, Hawaii >PROPAGATION AND LOCALIZATION OF VERTICALLY POLARIZED PLASMON-LO PHONON COLLECTIVE EXCITATIONS IN DOPED GaAs/AlAs SUPERLATTICES
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PROPAGATION AND LOCALIZATION OF VERTICALLY POLARIZED PLASMON-LO PHONON COLLECTIVE EXCITATIONS IN DOPED GaAs/AlAs SUPERLATTICES

机译:掺杂GaAs / AlAs超晶格中垂直极化等离子体-LO声子集体激发的传播和局部化

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摘要

The coupled plasmon-LO phonon collective excitations polarized normal to the layers were studied by Raman scattering in doped GaAs/AlAs superlattices with broad minibands. Different character-istical asymmetries of the Raman lines corresponding to the coupled modes were found in samples with different electron densities. It was shown that the observed asymmetries are caused by the dispersions of the coupled plasmon-LO phonon excitations. In accordance with the theoretical predictions, the coupled modes reveal either a plasmon or a phonon character, depending on the electron density. The transition from propagating to localized superlatice plasmons was observed with the increase of the doping concentration.
机译:通过拉曼散射在宽禁带宽的掺杂GaAs / AlAs超晶格中研究了垂直于层极化的等离激元LO声子集体激发。在具有不同电子密度的样品中发现了与耦合模式相对应的拉曼线的不同的特性-理论不对称性。结果表明,观察到的不对称性是由耦合等离子体激元-LO声子激发的色散引起的。根据理论预测,耦合模式根据电子密度显示出等离激元或声子特性。随着掺杂浓度的增加,观察到了从传播到局部超晶格等离子体激元的过渡。

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