首页> 外文会议>International Symposium on Advanced Ceramics; 20061211-15; Singapore(SG) >Preparation and Electrical-conductive Property of SnO_2- based Ceramics with 0.5 CuO and Sb_2O_3
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Preparation and Electrical-conductive Property of SnO_2- based Ceramics with 0.5 CuO and Sb_2O_3

机译:0.5%CuO和Sb_2O_3的SnO_2基陶瓷的制备及导电性能

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摘要

In this study, SnO_2-based ceramics, with 0.5%CuO as sintering aid and Sb_2O_3 as activator of the electrical conductivity, was obtained by pressureless sintering at 1450℃ for 5 h. Densification behavior and microstructure development strongly depend on Sb_2O_3. The characteristization of microstructures on Sb_2O_3 concentrations are analyzed by SEM. A small amount of CuO improves densification; Sb_2O_3 retards the densification of SnO_2-based ceramic. The electrical resistivities of SnO_2-based ceramics with different contents of Sb_2O_3 are measured by the standard four probe method and varied in a wide range. The electrical resistivity arrives the minimal value of 4.964×10~(-2) Ω·cm for 99%SnO_2+0.5%CuO +0.5%Sb_2O_3. More content of Sb_2O_3 than that of CuO causes the degression of density and the increasing of electrical resistivity of ceramics.
机译:本研究通过在1450℃下无压烧结5 h,获得以0.5%CuO为烧结助剂和Sb_2O_3为导电性活化剂的SnO_2基陶瓷。致密化行为和微观结构的发展很大程度上取决于Sb_2O_3。通过SEM分析了Sb_2O_3浓度下的微观结构特征。少量的CuO可以提高致密性。 Sb_2O_3阻碍了SnO_2基陶瓷的致密化。通过标准的四探针法测量具有不同Sb_2O_3含量的SnO_2基陶瓷的电阻率,并在很宽的范围内变化。对于99%SnO_2 + 0.5%CuO + 0.5%Sb_2O_3,电阻率达到最小值4.964×10〜(-2)Ω·cm。 Sb_2O_3的含量高于CuO的含量会导致陶瓷密度下降和电阻率增加。

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