首页> 外文会议>International Photovoltaic Science and Engineering Conference(PVSEC-15): Technical Digest vol.2; 20051010-15; Shanghai(CN) >Research Development On Luminescence Characteristics Of Nanocrystalline Silicon NC_Si Films
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Research Development On Luminescence Characteristics Of Nanocrystalline Silicon NC_Si Films

机译:纳米晶硅NC_Si薄膜发光特性的研究与开发

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摘要

Two kinds of photoluminescence models of Si nanostructural materials are reviewed in this paper, combining with various experiments, such as ion implantation, plasma enhanced chemical Vapor Deposition and so on, and also other possible factors of luminescence properties of nanocrystalline films are commentated in this paper. In the end, from the microcosmic point of view, the luminescence characteristics of nano silicon nanostructural materials are analyzed and two basic factors based on the structural properties of nanostructural materials are put forward.
机译:本文综述了两种硅纳米结构材料的光致发光模型,并结合离子注入,等离子体增强化学气相沉积等多种实验方法,对纳米晶薄膜发光性能的其他可能影响因素进行了评述。 。最后,从微观的角度分析了纳米硅纳米结构材料的发光特性,提出了基于纳米结构材料结构特性的两个基本因素。

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