Advanced Power Semiconductor Devices demonstrates New Directions in System Engineering

摘要

The paper presents a comparison of recently introduced device concepts like the Super Junction MOSFET the IGBT and the actual trends in SiC devices. All these devices are capable of blocking voltages in the range of 1000 V, and optimized for different fields of applications. The latest Generation of CoolMOS combines extremly high on state conductivity with ultrafast switching speed at full pulse current capability. The blocking voltage capability ranges from 500V up to 800V. In many applications the outstanding switching performance of the CoolMOS can't be utilized due to the dynamic behaviour of the diode. For this reason a whole family of SiC-diodes have been developed to get the ideal matched pair of switch and ultrafast diode. The performance of the diode will be discussed. Silicon carbide switching devices exhibit superior properties compared to silicon devices. Low specific on-resistance for high breakdown voltages is believed to be the most outstanding feature of SiC power switching devices. MOSFETs and JFETs capable to block 1800V with a specific on-resistance of 47mΩcm~2 and 14.5mΩcm~2, resp., are SiC devices attractive for the system designer. In order to illustrate these expectations on real devices, vertical normally on JFETs with blocking voltages up to 1800V and a specific on-resistance of 12mΩ cm~2 are realized and will be discussed.