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The Study of Collateral Damages in the Process of Femtosecond Laser Micromachining Single-crystalline Silicon

机译:飞秒激光微加工单晶硅过程中附带损害的研究

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Femtosecond laser pulses are irradiated on a single-side polished single-crystalline silicon wafer. Metamorphic zone appears around the ablated zone and the morphology changes gradually in the metamorphic zone. Typical phenomena of thermal ablation such as melt-resolidification and subtransparent glassy materials occur in the marginal area of the ablated zone. No apparent changes are found among microscopic morphologies of the ablated, metamorphic and unirradiated zones. There are flaws and spallations on the smooth back surface of the wafer, which are caused by the stress inside the sample. Nanomechanical properties of the sample surface hardly change in the small scope of the backside around the ablated zone. While regular changes occur in large scope, which is the conjunct result of such stresses caused by many different collateral damages.
机译:飞秒激光脉冲照射在单面抛光的单晶硅晶片上。变质带出现在烧蚀区周围,形态在变质带中逐渐变化。在烧蚀区的边缘区域会发生典型的热烧蚀现象,例如熔体再凝固和亚透明玻璃状材料。在烧蚀的,变质的和未照射的区域的微观形态之间没有发现明显的变化。由于样品内部的应力导致晶圆光滑的背面存在缺陷和剥落。样品表面的纳米力学性能几乎不会在烧蚀区周围的小范围内发生变化。尽管定期变化发生的范围很大,这是由许多不同的附带损害引起的这种压力的共同结果。

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