New Generation 650 V MOSFET with Integrated Fast Body Diode for ZVS Topologies

摘要

Since modern power supply is requested to have high power density and high efficiency power conversion, zero-voltage switching (ZVS) topologies should be a perfect choice. These two goals can be accomplished by Infineon Technologies new reference 650V with an integrated fast body diode MOSFET series, CFD2. This paper presents to use new CFD generation of Super Junction (SJ) MOSFET which is especially optimized for using CFD2 in ZVS phase shifted full bridge converter to provide high efficient power conversion. Some key parameters of MOSFET using in ZVS topologies will be discussed in detail and will show the merits of CFD2 in ZVS topologies. Experimental results base on ZVS phase shifted full bridge converter using CFD2 will be given to verify the overall performance of this new device.