A Low Switching Loss Superjunction MOSFET (Super J-MOS) by Optimizing Surface Design

摘要

In purpose of making power MOSFETs more efficient in electric equipments,we have launched 600V-class Superjunction MOSFET(Super J-MOS) with excellent switching performance trade-off between turn-off loss (Eoff) and turn-off dV/dt. The Super J-MOS achieved the Eoff of 165uJ at the turn-off dV/dt of 10kV/us in a step down chopper circuit by optimizing a gate-to drain capacitance (Cgd) and a threshold voltage (Vth). The Eoff in the Super J-MOS is reduced by about 38% compared to a Competitor A in a 400W-class power supply.As a result, the power supply using the fabricated Super J-MOS achieved 0.35% higher efficiency compared with Competitor A.