A New a-Si TFT Pixel Circuit to Suppress Degradation of Threshold Voltage for Active-Matrix OLEDs

摘要

A new a-Si:H thin-film transistor pixel circuit employing negative bias annealing for active matrix organic light emitting diode (AMOLED) is proposed. The circuit consists of a driving TFT, three switching TFTs and two storage capacitors. The experimental results of the new driving scheme exhibit that this method suppresses the troublesome degradation of V_(TH) in a-Si:H TFT successfully. The pixel circuit was also verified by Spice simulation of which the parameters were extracted experimental result.